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28C010T
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch A7 A16 Data Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy
X Decoder
Memory Array
Memory
Logic Diagram
FEATURES:
* 128k x 8-bit EEPROM * RAD-PAK(R) radiation-hardened against natural space radiation * Total dose hardness: - > 100 krad (Si), depending upon space mission * Excellent Single event effects - SELTH > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode * Package: - 32-pin RAD-PAK(R) flat pack/DIP package - JEDEC-approved byte-wide pinout * High speed: - 120, 150, and 200 ns maximum access times available * High endurance: - 10,000 erase/write (in Page Mode), - 10 year data retention * Page write mode: - 1 to 128 bytes * Low power dissipation - 20 mW/MHz active (typical) - 110 W standby (maximum) * Standard JEDEC package width
DESCRIPTION:
Maxwell Technologies' 28C010T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C010T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK(R) provides greater than 100 krad(Si) radiation dose tolerance. This product is available with screening up to Class S.
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1 Megabit (128K x 8-Bit) EEPROM
TABLE 1. 28C010T PINOUT DESCRIPTION
PIN 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 13, 14, 15, 17, 18, 19, 20, 21 24 22 29 32 16 1 30 SYMBOL A0-A16 I/O0 - I/O7 OE CE WE VCC VSS RDY/BUSY RES DESCRIPTION Address Data I/O Output Enable Chip Enable Write Enable Power Supply Ground Ready/Busy Reset
28C010T
TABLE 2. 28C010T ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage (Relative to VSS) Input Voltage (Relative to VSS) Package Weight SYMBOL VCC VIN RP RT RD Thermal Impedance (RP and RT Packages) Thermal Impedance (DIP Package) Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0V for pulse width < 50ns. FJC FJC TOPR TSTG -55 -65 MIN -0.6 -0.5 1 7.4 2.7 10.9 2.4 2.17 +125 +150
C/W C/W C C
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TYP
MAX +7.0 +7.0
UNITS V V Grams
TABLE 3. DELTA LIMITS1
PARAMETER ICC1 ICC2 ICC3A VARIATION2 10% 10% 10%
10% ICC3B 1. Parameters are measured and recorded as Deltas per MIL-STD-883 for Class S Devices 2. Specified in Table 6
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1 Megabit (128K x 8-Bit) EEPROM
TABLE 4. 28C010T RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage Input Voltage SYMBOL VCC VIL VIH RES_PIN 1. VIL min = -1.0V for pulse width < 50 ns VH MIN 4.5 -0.31 2.2 VCC -0.5
28C010T
MAX 5.5 0.8 VCC +0.3 VCC +1 UNITS V V
TABLE 5. 28C010T CAPACITANCE
(TA = 25 C, f = 1 MHZ) PARAMETER Input Capacitance: VIN = 0V 1 Output Capacitance: VOUT = 0V 1 1. Guaranteed by design. SYMBOL CIN COUT MIN --MAX 6 12 UNITS pF pF
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TABLE 6. 28C010T DC ELECTRICAL CHARACTERISTICS
(VCC = 5V 10%, TA = -55 TO +125 C, UNLESS OTHERWISE SPECIFIED) PARAMETER Input Leakage Current Output Leakage Current Standby VCC Current Operating VCC Current TEST CONDITION VCC = 5.5V, VIN = 5.5V VCC = 5.5V, VOUT = 5.5V/0.4V CE = VCC CE = VIH IOUT = 0mA, Duty = 100%, Cycle = 1 s at VCC = 5.5V IOUT = 0mA, Duty = 100%, Cycle = 150ns at VCC = 5.5V Input Voltage RES_PIN Output Voltage2 IOL = 2.1 mA IOH = - 0.4 mA IOH= - 0.1 mA 1. ILI for RES = 100uA max. 2. RDY/BSY is an open drain output. Only VOL applies to this pin. 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 SUBGROUPS 1, 2, 3 1, 2, 3 1, 2, 3 SYMBOL IIL ILO ICC1 ICC2 ICC3A ICC3B VIL VIH VH VOL VOH VOH MIN -------2.2 VCC -0.5 -2.4 VCC-0.3V MAX 21 2 20 1 15 50 0.8 --0.4 -V V UNITS A A A mA mA
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1 Megabit (128K x 8-Bit) EEPROM
28C010T
TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V + 10%, TA = -55 TO +125 C) PARAMETER Address Access Time CE = OE = VIL, WE = VIH -120 -150 -200 Chip Enable Access Time OE = VIL, WE = VIH -120 -150 -200 Output Enable Access Time CE = VIL, WE = VIH -120 -150 -200 Output Hold to Address Change CE = OE = VIL, WE = VIH -120 -150 -200 Output Disable to High-Z 2 CE = VIL, WE = VIH -120 -150 -200 CE = OE = VIL, WE = VIH -120 -150 -200 RES to Output Delay3 CE = OE = VIL, WE = VIH -120 -150 -200 SYMBOL tACC SUBGROUPS 9, 10, 11 ---tCE 9, 10, 11 ---tOE 9, 10, 11 0 0 0 tOH 9, 10, 11 0 0 0 9, 10, 11 tDF 0 0 0 tDFR 0 0 0 9, 10, 11 ---400 450 650 50 50 60 300 350 450 ns ---ns 75 75 100 ns 120 150 200 ns 120 150 200 ns MIN MAX UNITS ns
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tRR
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design.
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1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 C) PARAMETER Address Setup Time -120 -150 -200 Chip Enable to Write Setup Time (WE controlled) -120 -150 -200 Write Pulse Width CE controlled -120 -150 -200 WE controlled -120 -150 -200 Address Hold Time -120 -150 -200 Data Setup Time -120 -150 -200 Data Hold Time -120 -150 -200 Chip Enable Hold Time (WE controlled) -120 -150 -2000 Write Enable to Write Setup Time (CE controlled) -120 -150 -200 Write Enable Hold Time (CE controlled) -120 -150 -200 SYMBOL tAS SUBGROUPS 9, 10, 11 0 0 0 tCS 9, 10, 11 0 0 0 9, 10, 11 tCW 200 250 350 tWP 200 250 350 tAH 9, 10, 11 150 150 200 tDS 9, 10, 11 75 100 150 tDH 9, 10, 11 10 10 10 tCH 9, 10, 11 0 0 0 tWS 9, 10, 11 0 0 0 tWH 9, 10, 11 0 0 0 MIN 1
28C010T
MAX -------
UNITS ns
ns
ns ------ns ---ns ---ns ---------ns ---ns
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ns
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1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 C) PARAMETER Output Enable to Write Setup Time -120 -150 -200 Output Enable Hold Time -120 -150 -200 Write Cycle Time2 -120 -150 -200 Data Latch Time -120 -150 -200 Byte Load Window -120 -150 -200 Byte Load Cycle -120 -150 -200 Time to Device Busy -120 -150 -200 Write Start Time3 -120 -150 -200 RES to Write Setup Time4 -120 -150 -200 VCC to RES Setup Time4 -120 -150 -200 1. Use this device in a longer cycle than this value. SYMBOL tOES SUBGROUPS 9, 10, 11 0 0 0 tOEH 9, 10, 11 0 0 0 tWC 9, 10, 11 ---tDL 9, 10, 11 250 300 400 tBL 9, 10, 11 100 100 200 tBLC 9, 10, 11 0.55 0.55 0.95 tDB 9, 10, 11 100 120 170 tDW 9, 10, 11 150 150 250 tRP 9, 10, 11 100 100 200 tRES 9, 10, 11 1 1 3 MIN 1
28C010T
MAX ----
UNITS ns
ns ---ms 10 10 10 ns ---s ---s 30 30 30 ns ---ns ---s ---s ----
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1 Megabit (128K x 8-Bit) EEPROM
28C010T
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design.
TABLE 9. 28C010T MODE SELECTION 1
PARAMETER Read Standby Write Deselect Write Inhibit Data Polling Program 1. X = Don't care. CE VIL VIH VIL VIL X X VIL X OE VIL X VIH VIH X VIL VIL X WE VIH X VIL VIH VIH X VIH X I/O DOUT High-Z DIN High-Z --Data Out (I/O7) High-Z RES VH X VH VH X X VH VIL RDY/BUSY High-Z High-Z High-Z --> VOL High-Z --VOL High-Z
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FIGURE 1. READ TIMING WAVEFORM
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1 Megabit (128K x 8-Bit) EEPROM
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
28C010T
Memory
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1 Megabit (128K x 8-Bit) EEPROM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
28C010T
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1 Megabit (128K x 8-Bit) EEPROM
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
28C010T
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1 Megabit (128K x 8-Bit) EEPROM
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
28C010T
Memory
FIGURE 6. DATA POLLING TIMING WAVEFORM
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1 Megabit (128K x 8-Bit) EEPROM
28C010T
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (ENABLE S/W PROTECTION)
FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (DISABLE S/W PROTECTION)
Memory
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30 s for the second byte. In the same manner each additional byte of data can be loaded within 30 s. In case CE and WE are kept high for 100 s after data input, EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM.
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1 Megabit (128K x 8-Bit) EEPROM
WE, CE Pin Operation
28C010T
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be high during read and programming because it doesn't provide a latch function.
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Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
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1 Megabit (128K x 8-Bit) EEPROM
28C010T
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at VCC on/off
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When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin.
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn't finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input.
tRES
tRP
tWC
3. Software Data Protection
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1 Megabit (128K x 8-Bit) EEPROM
28C010T
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
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1 Megabit (128K x 8-Bit) EEPROM
28C010T
Memory
32 PIN DUAL IN-LINE PACKAGE1
DIMENSION SYMBOL MIN A b b2 c D E eA eA/2 e L Q S1 S2 0.135 0.015 0.005 0.005 -0.016 0.045 0.009 -0.510 NOM 0.187 0.018 0.050 0.010 1.600 0.590 0.600 BSC 0.300 BSC 0.100 BSC 0.145 0.037 0.025 -0.155 0.060 --MAX 0.225 0.020 0.065 0.012 1.616 0.610
N 32 1. Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type Constant Acceleration is 3000g's.
Note: All dimensions in inches 16
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1 Megabit (128K x 8-Bit) EEPROM
28C010T
D
Memory
28C010T 32-PIN RAD-PAK(R) FLAT PACKAGE
DIMENSION SYMBOL MIN A b c D E E1 E2 E3 e L Q S1 N 0.355 0.020 0.005 0.121 0.015 0.004 -0.472 -0.304 0.030 NOM 0.134 0.017 0.005 0.820 0.480 -0.310 0.085 0.050BSC 0.365 0.035 0.027 32 0.375 0.045 -MAX 0.147 0.022 0.009 0.830 0.488 0.498 ---
Note: All dimensions in inches.
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1 Megabit (128K x 8-Bit) EEPROM
28C010T
D
Memory
28C010T Rad-Tolerant Flat Package
SYMBOL MIN A b c D E E1 E2 E3 e L Q S1 N 0.355 0.020 0.005 0.095 0.015 0.004 -0.472 -0.350 0.030 DIMENSION NOM 0.109 0.017 0.005 0.820 0.480 -0.365 0.085 0.050BSC 0.365 0.035 0.027 32 0.375 0.045 -MAX 0.125 0.022 0.009 0.830 0.488 0.498 ---
Note: All Dimentions in Inches
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1 Megabit (128K x 8-Bit) EEPROM
Important Notice:
28C010T
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies' liability shall be limited to replacement of defective parts.
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1 Megabit (128K x 8-Bit) EEPROM
Product Ordering Options
Model Number 28C010T XX F X -XX Feature Access Time
28C010T
Option Details
12 = 120 ns 15 = 150 ns 20 = 200 ns
Screening Flow
Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55C, +25C, +125C) E = Engineering (testing @ +25C)
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Package1
D = Dual In-line Package (DIP)1 F = Flat Pack
Radiation Feature
RP = RAD-PAK(R) package RT = No Radiation Guarantee CLass E and I Only RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at 1 Megabit (128k x 8-bit) EEPROM
Base Product Nomenclature
1) Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration :For DIP package type Constant Acceleration is 3000g's.
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